1,296 technical terms and definitions
etch wafer edge exclusion budget, etch edge coverage budget, etch edge qualification boundary
Etch Edge Exclusion Budget An etch edge exclusion budget defines the wafer region covered by a process or measurement claim and the evidence needed to use the region near its…
etch endpoint detection sensitivity prediction machine learning, etch endpoint, detection sensitivity prediction, cd, etch endpoint detection sensitivity prediction
Etch Endpoint Detection Sensitivity Prediction with Machine Learning Introduction & Motivation Etch Endpoint Detection Sensitivity Prediction with Machine Learning addresses…
endpoint response margin, etch stop window, endpoint delay budget
Etch Endpoint Margin Etch endpoint margin is the room between a qualified endpoint decision and the clearing or protected-layer limits of the actual process. It accounts for what…
etch endpoint optical emission signal noise prediction, etch endpoint optical, endpoint optical emission, optical emission signal, emission signal noise
Etch Endpoint Optical Emission Signal Noise Prediction with Machine Learning Introduction & Motivation Etch Endpoint Optical Emission Signal Noise Prediction with Machine Learning…
plasma etch equipment, icp etch, ccp etch, reactive ion etch equipment, plasma reactor, etch simulator
Etch equipment in semiconductor manufacturing is a cluster of 3–5 million USD plasma chambers where every hardware tolerance maps directly to a nanometer of critical-dimension…
etch corner faceting budget, etch mask corner facet budget, etch top corner bevel budget
Etch Faceting Budget An etch faceting budget defines how much corner rounding an integration can tolerate at a masking edge or a feature's top corner, and the evidence needed…
etch centerline tilt budget, etch bottom displacement budget, etch feature path budget
Etch Feature Tilt Budget An etch feature tilt budget defines the allowed change in feature-center position with depth and the measurements needed to verify it. It connects…
etch depth dependent path budget, etch intermediate center offset budget, etch hole twisting allowance
Etch Feature Twisting Budget An etch feature twisting budget defines the allowed depth-dependent distortion of a feature and the measurements used to assess it. It prevents…
etch films
Etch Film An etch film is a thin material layer considered in relation to a removal step. It may be the target being removed, the mask protecting a pattern, or the stop layer that…
etch film stack, etch modeling, etch film stack math, film stack etch modeling
Etch Film Stack Mathematical Modeling 1. Introduction and Problem Setup A film stack in semiconductor manufacturing consists of multiple thin-film layers that must be precisely…
etch film stack, etch film stacks, filmstack boundaries, gate filmstack, contact filmstack, etch film vs filmstack
An etch filmstack is the full ordered sequence of material layers present at a given point on the wafer, listed from the topmost mask down to the substrate or the deepest layer…
etch first-wafer effect budget, etch lot start wafer budget, etch opening wafer conditioning budget
Etch First Wafer Effect Budget An etch first wafer effect budget accounts for the difference in etch behaviour between the opening wafers of a lot and the steady state reached…
etch sidewall footing budget, etch base corner footing budget, etch foot residual budget
Etch Footing Budget An etch footing budget defines how much unremoved material an integration can tolerate at the base of a sidewall, and the evidence needed to measure…
etch gas ratio budget, etch etchant additive ratio budget, etch flow ratio budget
Etch Gas Flow Ratio Budget An etch gas flow ratio budget bounds the balance between the etchant and the additive or diluent gases, and records the conditions under which that…
icp chamber iadf, etch ion angular distribution function, ion angular distribution function etch, ion angle distribution icp, iadf plasma etch, icp ion angle spread, wafer ion angular distribution
The ion angular distribution function in an ICP etch chamber is set by one ratio — ion thermal energy divided by sheath voltage — and at production conditions (5 mTorr Ar, 200 V…
icp iadf mathematical modeling, icp iadf modeling, etch iadf modeling, icp ion angular distribution model, icp sheath iadf simulation, inductive plasma iadf model, pic mcc icp iadf, feature scale icp iadf model
The mathematical modeling of the ICP ion angular distribution is fundamentally a differential charging problem, because while the inductive plasma chamber delivers an extremely…
icp etch chamber, inductively coupled plasma etch chamber, inductively coupled etch reactor, high density plasma etch chamber, transformer coupled plasma etch, icp source chamber, icp chamber hardware, icp chamber tuning
An ICP etch chamber is built around a dielectric window that must do three jobs at once: hold off one atmosphere of pressure across a 300 mm span — 730 kilograms of force — while…
icp chamber iedf, etch ion energy distribution function, ion energy distribution function etch, ion energy distribution icp, iedf plasma etch, icp ion energy spectrum, wafer ion energy distribution
The ion energy distribution function in an ICP etch chamber is controlled by one independent knob — the bias electrode — that sets the peak ion energy without changing the ion…
icp iedf mathematical modeling, icp iedf modeling, etch iedf modeling, icp ion energy distribution model, icp sheath iedf simulation, inductive plasma iedf model, pic mcc icp iedf, reduced order icp iedf model
The mathematical modeling of the ICP ion energy distribution function is ultimately a measurement inversion problem: every experimental IEDF is the true plasma distribution…
icp chamber mathematical modeling, icp chamber modeling, inductively coupled plasma model, icp plasma simulation, icp reactor model, icp multiphysics model, icp digital twin, icp chamber simulation
Etch ICP chamber math modeling is organized around one physical fact that determines almost everything else: inductive power does not fill the chamber, it stops in a thin layer…
icp pic-mcc phase space etch plasma, kinetic icp plasma etch phase space model, icp pic-mcc full dimensional etch, icp etch plasma kinetic ion electron modeling
An inductively-coupled plasma etch chamber drives PIC-MCC simulations into a fundamentally harder computational regime than a CCP because the plasma density is 50 times higher: 5…
etch iso dense cd bias budget, etch iso-dense bias budget, etch pattern-density cd bias budget
Etch Iso-Dense CD Bias Budget An etch iso-dense CD bias budget defines how far an isolated feature's post-etch width may differ from a dense feature's width drawn at the same…
Mathematical Modeling of Dry Etch Kinetics, Surface Reaction Chemistry, Knudsen Transport, and Profile Evolution 1. The experiment that forces the model In 1979 John Coburn…
pattern density etch budget, etch clearing time budget, microloading time budget
Etch Loading Budget An etch loading budget accounts for differences in clearing time caused by the patterned wafer, then checks whether the extra exposure is acceptable. It…
etch loading effect microloading bias prediction, etch loading effect, loading effect microloading, effect microloading bias, microloading bias prediction
Etch Loading Effect Microloading Bias Prediction with Machine Learning Introduction & Motivation Etch Loading Effect Microloading Bias Prediction with Machine Learning addresses…
mask edge retreat budget, mask thinning budget, etch mask faceting budget
Etch Mask Erosion Budget An etch mask erosion budget checks whether a patterned mask survives with enough thickness and the required lateral shape throughout pattern transfer.…
etch hard mask open budget, etch barc open budget, etch mask opening cd budget
Etch Mask Open Budget An etch mask open budget accounts for the pattern-transfer step that opens the anti-reflective coating and hard mask before the main etch, and bounds…
etch measurement acceptance margin, etch uncertainty decision rule, etch dimensional guard band
Etch Metrology Guard Band An etch metrology guard band separates a product tolerance limit from a measurement acceptance limit under a stated decision rule. It makes room for…
etch wafer site sampling, etch measurement sampling hierarchy, etch sample coverage plan
Etch Metrology Sampling Plan An etch metrology sampling plan specifies which wafers, locations, features and repeated measurements will support a defined process decision. It…
etch micromask budget, etch grass budget, etch floor pillar budget
Etch Micromasking Budget An etch micromasking budget defines how many residual pillars or spikes an etched surface can tolerate, and the evidence needed to detect them, identify…
etch microtrench depth budget, etch corner recess budget, etch local floor recess budget
Etch Microtrenching Budget An etch microtrenching budget defines the allowed local recess near a feature's sidewall feet and the evidence needed to verify it. It keeps the deepest…
plasma etch, RIE, reactive ion etching, etch simulation, DRIE
Semiconductor Manufacturing Process: Etch Modeling 1. Introduction Etch modeling is one of the most complex and critical areas in semiconductor fabrication simulation. As device…
etch minimum opening budget, etch local constriction budget, etch neck clearance budget
Etch Necking Budget An etch necking budget defines the minimum local opening that must remain and the evidence needed to verify it through the relevant process steps. It keeps…
etch lateral notch budget, etch interface undercut budget, etch notch width budget
Etch Notching Budget An etch notching budget defines the allowed local lateral removal at a feature base or interface and the resulting dimensions that must remain. It links…
etch endpoint open area budget, etch low open area endpoint budget, etch endpoint signal to noise budget
Etch Open Area Endpoint Budget An etch open area endpoint budget accounts for how the strength of an optical endpoint signal scales with the exposed area of the film being etched…
etch over etch time budget, etch additional clearing budget, etch overetch protection window
Etch Overetch Budget An etch overetch budget compares the additional removal needed to clear required features with the damage or material loss that the rest of the stack can…
PASS, Al corrosion passivation
Etch Passivation (PASS) Passivation can mean protection during etching or a post-etch treatment that reduces corrosion or reactivity. Place the step in context Identify…
etch structure collapse budget, etch feature deflection budget, etch clean dry collapse budget
Etch Pattern Collapse Budget An etch pattern collapse budget defines the structural condition and clearances that must survive the etch-related process sequence. It includes…
etch plasma induced damage budget, etch pid budget, etch subsurface damage budget
Etch Plasma Damage Budget An etch plasma damage budget defines how much altered material an integration can tolerate beneath or beside an etched surface, and the evidence needed…
etch plasma dynamics ml prediction, etch plasma, dynamics ml prediction, 100v amu lam ml pid rie, etch plasma dynamics, plasma dynamics ml, plasma dynamics, dynamics ml, ml prediction
Etch Plasma Dynamics and ML Prediction Introduction & Motivation Reactive ion etching (RIE) is critical for semiconductor manufacturing. Etch plasma dynamics directly determine…
etch ignition latency budget, etch startup ignition budget, etch plasma startup confirmation budget
Etch Plasma Ignition Budget An etch plasma ignition budget defines the allowed startup behavior, the evidence that confirms ignition and the disposition of wafers exposed…
plasma etch modeling, plasma etch physics, ion bombardment, reactive ion etch, RIE
Etch Profile Mathematical Modeling 1. Introduction Plasma etching is a critical step in semiconductor manufacturing where material is selectively removed from a wafer surface.…
plasma surface molecular dynamics, etch molecular dynamics modeling, ion radical surface interaction, atomistic etch simulation
Etch Plasma–Surface Molecular Dynamics (MD) Modeling resolves the femtosecond-to-nanosecond atomic trajectories that turn an incident ion, radical, neutral, or reaction product…
etch post maintenance qualification, etch chamber recovery qualification, etch maintenance process verification
Etch Post-maintenance Qualification Etch post-maintenance qualification establishes whether the intended process performance is supported after a defined chamber intervention. It…
Etch Process Flow An etch process flow is the sequence of preparation, pattern transfer, clearing and verification around an etch step. It describes decisions and dependencies…
plasma etch reactive ion, anisotropic isotropic etch, etch selectivity chemistry, atomic layer etching
Semiconductor Etch Processes are the subtractive patterning techniques that selectively remove material from the wafer according to photoresist or hard mask patterns — ranging…
etch multi response window, etch recipe window overlap, etch operating window map
Etch Process Window Map An etch process window map shows the operating region in which all specified process responses meet their requirements. It connects settings…
sidewall angle, profile uniformity, bowed profile, tapered profile, undercut profile, aspect ratio dependent etching, RIE lag
Etch Profile Etch profile is the cross-sectional shape of an etched feature. It includes depth, width along the opening, sidewall shape and bottom condition. Two features can…
etch profile acceptance envelope, etch sidewall shape budget, etch cross section profile budget
Etch Profile Budget An etch profile budget defines the allowed cross-sectional shape of a feature and the variation that must be checked before the feature is accepted. It…
anisotropic etch, etch selectivity, plasma etch profile, sidewall passivation
Etch Profile Control is the engineering of plasma etch conditions to achieve the target feature shape — balancing anisotropy (vertical profile), selectivity (stop on the right…