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Glossary

1,012 technical terms and definitions

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bitline spacer etch

nitride oxide nitride spacer, N O N multilayer spacer, storage node contact self alignment, bitline parasitic capacitance

The bitline spacer etch forms a multilayer nitride-oxide-nitride sidewall around the finished bitline conductor stack, and it is a genuinely different problem from…

buried wordline etch

BWL etch, WL trench, gate trench DRAM, saddle fin recess, GIDL control, BCAT transistor

The buried wordline trench etch — called BWL Etch, WL Trench, or Gate Trench depending on the maker — carves the channel for a DRAM access transistor's gate down into the silicon…

begin crystal pulling

grown junction 1951 begin crystal pulling, stefan condition crystal growth interface, withdraw the seed czochralski, grown junction transistor interface velocity

Begin Crystal Pulling: Reversing the Interface from Dissolving to Growing Step nine deliberately dissolved seed material into the melt; step ten has to reverse that exact…

base logic die

hbm base die, base die, hbm4 base logic die, memory controller die, hbm logic die, custom base die, hbm phy

The base logic die is the bottom die of an HBM stack: the layer that aggregates every TSV column from the DRAM dies above it, runs the physical interface to the host, and handles…

bird beak lithography

local oxidation of silicon, locos isolation, nitride mask oxidation encroachment

LOCOS Bird's Beak Before shallow trench isolation existed, fabs separated transistors with LOCOS — local oxidation of silicon — and LOCOS had a built-in flaw baked into its own…

bose-einstein statistics

boson quantum distribution, bose einstein condensation bec, phonon occupancy lattice thermal conductivity, debye heat capacity, photonic stimulated emission, semiconductor quantum statistics

Bose–Einstein Statistics: Bosonic Occupation Physics, Lattice Phonons, and Photonic Quantum Phenomena in Semiconductors Executive Overview Bose–Einstein (BE) statistics governs…

build the cross coupled inverter pair as a bistable storage element

sram six transistor step 2 cross coupled inverter pair, cross coupled inverter bistable latch

Build the Cross-Coupled Inverter Pair as a Bistable Storage Element 2. Build the Cross-Coupled Inverter Pair as a Bistable Storage Element The core of every SRAM cell is not…

barrier layer tantalum nitride

tan copper diffusion barrier, amorphous barrier grain boundary, copper seed layer barrier

Tantalum Nitride Diffusion Barrier Copper interconnect only became possible once the industry solved a problem copper itself creates: copper diffuses readily through silicon…

ball grid array

A ball grid array, or BGA, is a chip packaging method that uses a grid of small solder balls on the underside of the package to connect it to a circuit board, replacing…

backside power delivery

Backside power delivery is a chip design approach that moves the power distribution network from the front side of the wafer, where signal wiring lives, to the back side, freeing…