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Glossary

3,807 technical terms and definitions

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semiconductor yield management defect

wafer yield improvement strategy, defect density reduction fab, yield learning excursion detection, systematic random defect analysis

Semiconductor Yield Management and Defect Reduction is the systematic discipline of maximizing the percentage of functional dies per wafer through defect detection, root cause…

sensitivity

metrology

Sensitivity in metrology is the change in instrument response per unit change in the measured quantity — mathematically the slope of the calibration curve (partial Signal /…

resistor

on chip resistor, integrated resistor, polysilicon resistor, thin film resistor, serpentine resistor

resistor is a passive component that opposes current and converts electrical energy to heat according to V = I × R. On-chip resistors set gain, bias, time constants, termination…

setup wafers

alignment verification, recipe verification, dummy wafer fill, send ahead wafer, tool readiness check, lithography calibration, batch uniformity, automated setup verification, non product wafer

Setup wafers are non-product wafers run specifically to verify that a tool is correctly aligned, properly configured with the right recipe parameters, and genuinely ready…

设备

shèbèi, 半导体设备, semiconductor equipment, 光刻机, ASML, 刻蚀设备, 制造设备

设备 — 半导体制造的"超级工具箱" 🔧🏭 拼音:shè bèi 一句话定义:半导体设备是将芯片设计图纸变为物理芯片的精密工业机器,是整个半导体产业链中技术门槛最高、附加值最大的环节之一——没有这些设备,再好的芯片设计都无法变为现实。 全球半导体设备市场规模约1200亿美元/年(2026年),是制造业皇冠上最耀眼的明珠之一。掌握关键设备,就掌握了芯片制造的命…

shallow trench isolation process

sti cmp planarization, trench fill oxide deposition, active area definition, isolation oxide densification

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

shallow trench isolation sti

sti process flow, sti fill cvd, sti cmp planarization, isolation trench semiconductor

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

shallow trench isolation sti

device isolation cmos, sti process fill, lcos isolation, isolation oxide semiconductor

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

sheet resistance mapping

sheet resistance map, sheet resistance uniformity mapping, wafer sheet resistance map, resistivity mapping four point probe

Four-point probe metrology measures sheet resistance by forcing current through two contacts and sensing voltage with two separate contacts, so the voltage channel carries almost…

shmoo plot

voltage frequency pass fail map, speed binning, timing guardband, wafer probe test, semiconductor test engineering

A shmoo plot is a two-dimensional pass/fail map produced during chip testing — typically voltage on one axis and frequency (or timing margin) on the other — that shows exactly…

short flow test structures

metrology

Spectroscopic ellipsometry and inline optical wafer metrology constitute the non-destructive physical measurement and defect detection disciplines that govern yield control across…

sic

semiconductor etch, sic dry etching, sic plasma etching, sf6 o2, sic trench etch, etch mask sic

Read SiC dry etching through a plasma-physics and etch-rate/selectivity lens rather than a wet-chemistry lens. Silicon carbide's lattice is locked together by Si–C covalent bonds…

sic power device fabrication

silicon carbide process, sic mosfet, sic wafer, wide bandgap fabrication

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

sic power module packaging

sic diode switching, sic inverter efficiency, sic device aging, sic gate driver design

Silicon Carbide Power Module is a wide-bandgap semiconductor technology enabling superior high-temperature, high-frequency power switching through improved blocking voltage…

sic semiconductor

silicon carbide, wide bandgap, sic power

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

sidewall image transfer

sit, self aligned spacer patterning, spacer lithography, sit patterning, pitch halving

Sidewall Image Transfer (SIT) is the self-aligned patterning technique that uses the sidewall spacers deposited on a lithographically defined mandrel as the actual etch mask…

sige hbt bipolar process

bipolar base collector emitter, heterojunction bipolar transistor fabrication, bicmos process integration, hbt speed cutoff frequency

A silicon-germanium heterojunction bipolar transistor is a vertical NPN device whose epitaxial base changes band structure and doping. Fabrication must grow a low-defect SiGe:C…

signal-to-noise ratio

snr, metrology

SNR (Signal-to-Noise Ratio) is the ratio of the analytical signal to the noise level — SNR = S / N where S is the signal intensity and N is the noise amplitude, quantifying…

signature analysis

metrology

Spectroscopic ellipsometry and inline optical wafer metrology constitute the non-destructive physical measurement and defect detection disciplines that govern yield control across…