pr etch process flow

# PR Etch Process Flow

PR Etch Process Flow describes the sequence connecting pattern preparation, removal and verification.

## Follow the transitions

Each box marks a manufacturing purpose, not an executable recipe. Some integrations combine steps or move strip and clean operations. Endpoint, where used, must be qualified against feature clearing and underlayer loss.

## Integration context

A PR pattern-transfer module treats resist as a mask during target etching, then removes it. BARC is not always present, and a multilayer resist stack may use a separate hard mask. Resist erosion and plasma-induced hardening affect both transfer accuracy and later strip difficulty.

## What to verify

Check pattern dimensions before etch, mask survival during transfer, and residues after strip.

Define the input surface and the acceptance criterion at each transition. A qualified transition must account for pattern density, wafer position and incoming-film variation; a nominal clearing time on one monitor does not establish the full operating window.

## Related terminology

pr etch process flow, PR pattern transfer. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Photoresist exposure families](https://www.fujifilm.com/us/en/business/semiconductor-materials/photoresists/krf). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.