pr etch film

# PR Etch Film

PR Etch Film describes the target and protected films in this removal module.

## Identify the target film

Name the material intended for removal separately from the mask and the protected landing. Measure incoming thickness and surface state; film names alone do not specify etch behavior.

## Integration context

A PR pattern-transfer module treats resist as a mask during target etching, then removes it. BARC is not always present, and a multilayer resist stack may use a separate hard mask. Resist erosion and plasma-induced hardening affect both transfer accuracy and later strip difficulty.

## What to verify

Check pattern dimensions before etch, mask survival during transfer, and residues after strip.

Before selecting removal conditions, identify all exposed neighboring materials and the amount of loss each can tolerate. Verify the result using the measurements appropriate to the structure, then check that the surface is suitable for the next deposition, contact or clean step.

## Related terminology

pr etch film. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Photoresist exposure families](https://www.fujifilm.com/us/en/business/semiconductor-materials/photoresists/krf). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.