Plasma Doping

Plasma doping (PLAD) implants dopant ions using a plasma immersion technique rather than a conventional beamline ion implanter, exposing the wafer to a dopant-containing plasma and biasing it to accelerate ions from that plasma into the wafer surface from all exposed angles simultaneously. This all-angle exposure makes plasma doping particularly well suited to conformally doping three-dimensional structures like FinFET fins or trench sidewalls, surfaces a conventional beamline implanter's single, fixed-angle ion beam cannot dope as uniformly across every exposed surface.