met1 etch process flow

# MET1 Etch Process Flow

MET1 Etch Process Flow describes the sequence connecting pattern preparation, removal and verification.

## Follow the transitions

Each box marks a manufacturing purpose, not an executable recipe. Some integrations combine steps or move strip and clean operations. Endpoint, where used, must be qualified against feature clearing and underlayer loss.

## Integration context

The illustrated subtractive aluminum module removes exposed AlCu while retaining masked lines. TiN can serve as an upper antireflective cap or a lower barrier; Ti and TiN layers are not interchangeable. A copper damascene flow instead patterns dielectric and fills metal.

## What to verify

Inspect linewidth, fences, alloy residues, barrier clearing and post-etch corrosion.

The illustrated sequence omits tool settings and integration-specific auxiliary steps. For AlCu, corrosion-control treatment must be coordinated with resist removal and atmospheric exposure. For gate and spacer modules, preserving a thin dielectric or exposed silicon is part of the clearing window, not an afterthought.

## Related terminology

met1 etch process flow, metal etch, Al etch, M1 etch, MET1 etch, AlCu etch. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Aluminum etch and corrosion control](https://www.nanofab.ualberta.ca/avoiding-corrosion-when-dry-etching-aluminum/). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.