met1 etch filmstack

# MET1 Etch Filmstack

MET1 Etch Filmstack describes the ordered materials and their roles in this pattern-transfer example.

## Read the interfaces

The stack is listed from the top surface downward in this example. State which films must clear and which must remain. Interface opening, bulk removal and landing can need different process conditions.

## Integration context

The illustrated subtractive aluminum module removes exposed AlCu while retaining masked lines. TiN can serve as an upper antireflective cap or a lower barrier; Ti and TiN layers are not interchangeable. A copper damascene flow instead patterns dielectric and fills metal.

## What to verify

Inspect linewidth, fences, alloy residues, barrier clearing and post-etch corrosion.

Before selecting removal conditions, identify all exposed neighboring materials and the amount of loss each can tolerate. Verify the result using the measurements appropriate to the structure, then check that the surface is suitable for the next deposition, contact or clean step.

## Related terminology

met1 etch filmstack, met1 etch film stack. Short abbreviations are local process vocabulary and can have other meanings; use the full module name when searching.

## Source and scope

[Aluminum etch and corrosion control](https://www.nanofab.ualberta.ca/avoiding-corrosion-when-dry-etching-aluminum/). The diagram is an original teaching schematic. Layer choices and process families describe an example rather than a universal manufacturing recipe.