2deg

A GaN HEMT (high-electron-mobility transistor) for RF power applications exploits the two-dimensional electron gas (2DEG) that forms at the interface between an AlGaN and GaN heterostructure, a thin, highly mobile sheet of electrons confined right at that material junction, to achieve both high electron mobility and high breakdown voltage simultaneously. GaN-on-SiC substrates are commonly used specifically for RF power applications, since SiC's good thermal conductivity helps dissipate the heat a high-power RF GaN HEMT generates more effectively than a GaN-on-silicon substrate would.